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Electron mobility determination of efficient phosphorescent iridium complexes with tetraphenylimidodiphosphinate ligand via transient electroluminescence method

Ming-Yu Teng1, Song Zhang1, Sheng-Wei Jiang2, Xu Yang2, Chen Lin1, You-Xuan Zheng1, Leyong Wang1, Di Wu2, Jing-Lin Zuo1, and Xiao-Zeng You1

1State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Microstructures, Center for Molecular Organic Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093, People’s Republic of China
2National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 22 Hankou Road, Nanjing 210093, People’s Republic of China

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(Received 7 December 2011; accepted 27 January 2012; published online 13 February 2012)

The electron mobility of Alq3 and iridium complexes was determined via transient electroluminescence (EL) method based on ITO (indium tin oxide)/di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane/complex/LiF/Al with short and rectangular driving voltage pulses. Apparent values of the electron mobility (μe) in complexes have been investigated from their onset of EL upon different driving voltages. The result reveals that the μe, 4.31 × 10−6 cm2/Vs, of the efficient phosphorescent material Ir(tfmppy)2(tpip) [1, tfmppy = 4-trifluoromethylphenylpyridine, tpip = tetraphenylimido-diphosphinate] under electric field of 1300 (V/cm)1/2 is as high as that of Alq3, which indicates that the good device performances of 1 are partly due to its high electron mobility.

© 2012 American Institute of Physics

KEYWORDS, PACS, and IPC

PACS

International Patent Classification (IPC)

  • C09K11/00

    Luminescent, e.g. electroluminescent, chemiluminescent, materials

  • H01L27/15

    Including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

  • H01L27/28

    Including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part

  • H01L33/00

    Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission, e.g. infra-red; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

  • H01L51/50

    Specially adapted for light emission, e.g. organic light emitting diodes (oled) or polymer light emitting devices (pled)

ARTICLE DATA

PUBLICATION DATA

ISSN

1941-420X (online)

  1. S. Lamansky, P. Djurovich, D. Murphy, F. Abdel-Razzaq, H. E. Lee, C. Adachi, P. E. Burrows, S. R. Forrest, and M. E. Thompson, J. Am. Chem. Soc. 123(18), 4304 (2001). [MEDLINE]
  2. J. W. Kang, S. H. Lee, H. D. Park, W. I. Jeong, K. M. Yoo, Y. S. Park, and J. J. Kim, Appl. Phys. Lett. 90(22), 223508 (2007)APPLAB000090000022223508000001. [ISI]
  3. H. H. Fong, K. C. Lun, and S. K. So, Chem. Phys. Lett. 353(5–6), 407 (2002). [Inspec] [ISI]
  4. S. Heun and P. M. Borsenberger, Chem. Phys. 200(1–2), 245 (1995). [Inspec] [ISI]
  5. Y. C. Zhu, L. Zhou, H. Y. Li, Q. L. Xu, M. Y. Teng, Y. X. Zheng, J. L. Zuo, H. J. Zhang, and X. Z. You, Adv. Mater. 23(35), 4041 (2011).
  6. H. Scher and E. W. Montroll, Phys. Rev. B 12(6), 2455 (1975).
  7. E. Lebedev, Th. Dittrich, V. Petrova-Koch, S. Karg, and W. Brütting, Appl. Phys. Lett. 71, 2686 (1997)APPLAB000071000018002686000001.
  8. R. Dost, A. Das, and M. Grell, J. Appl. Phys. 104, 084519 (2008)JAPIAU000104000008084519000001.
  9. S. C. Tse, H. H. Fong, and S. K. So, J. Appl. Phys. 94(3), 2033 (2003)JAPIAU000094000003002033000001. [ISI]
  10. C. Hosokawa, H. Tokailin, H. Higashi, and T. Kusumoto, Appl. Phys. Lett. 60(10), 1220 (1992)APPLAB000060000010001220000001.
  11. S. A. Van Slyke, C. H. Chen, and C. W. Tang, Appl. Phys. Lett. 69(15), 2160 (1996).
  12. S. C. Tse, S. W. Tsang, and S. K. So, J. Appl. Phys. 100(6), 2033 (2006).
  13. O. J. Weiß, R. K. Krause, and A. Hunze, J. Appl. Phys. 103, 043709 (2008)JAPIAU000103000004043709000001.
  14. C. D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, and J. M. Shaw, Science 283(5403), 822 (1999). [MEDLINE]
  15. P. V. Pesavento, R. J. Chesterfield, C. R. Newman, and C. D. Frisbie, J. Appl. Phys. 96(12), 7312 (2004)JAPIAU000096000012007312000001.
  16. C. Goldmann, S. Haas, C. Krellner, K. P. Pernstich, D. J. Gundlach, and B. Batlogg, J. Appl. Phys. 96(4), 2080 (2004).
  17. G. Juška, K. Arlauskas, M. Viliunas, and J. Kočka, Phys. Rev. Lett. 84(21), 4946 (2000).
  18. A. J. Mozer, N. S. Sariciftci, A. Pivrikas, R. Osterbacka, G. Juška, L. Brassat, and H. Bassler, Phys. Rev. B 71, 035214 (2005). [ISI]
  19. G. Juška, N. Nekrasas, V. Valentinavičius, P. Meredith, and A. Pivrikas, Phys. Rev. B 84, 155202 (2011).
  20. P. Prins, F. C. Grozema, J. M. Schins, T. J. Savenije, S. Patil, U. Scherf, and L. D. A. Siebbeles, Phys. Rev. B 73(4), 045204 (2006).
  21. R. J. O. M. Hoofman, M. P. de Haas, L. D. A. Siebbeles, and J. M. Warman, Nature (London) 392(6671), 54 (1998).
  22. A. M. van de Craats and J. M. Warman, Adv. Mater. 13(2), 130 (2001).
  23. A. J. Pal, R. Osterbacka, K. M. Kallman, and H. Stubb, Appl. Phys. Lett. 71(2), 228 (1997)APPLAB000071000002000228000001. [ISI]
  24. Y. Kawabe and J. Abe, Appl. Phys. Lett. 81(3), 493 (2002).
  25. B. Ruhstaller, S. A. Carter, S. Barth, H. Riel, W. Riess, and J. C. Scott, J. Appl. Phys. 89(8), 4575 (2001)JAPIAU000089000008004575000001.
  26. K. Book, H. Bassler, V. R. Nikitenko, and A. Elschner, Synth. Met. 111, 263 (2000). [Inspec] [ISI]
  27. W. Brutting, H. Riel, T. Beierlein, and W. Riess, J. Appl. Phys. 89(3), 1704 (2001)JAPIAU000089000003001704000001.
  28. S. Barth, P. Muller, H. Riel, P. F. Seidler, W. Riess, H. Vestweber, and H. Bassler, J. Appl. Phys. 89(7), 3711 (2001)JAPIAU000089000007003711000001.
  29. J. Lee, J. I. Lee, J. W. Lee, and H. Y. Chu, Org. Electron. 11(7), 1159 (2010).
  30. J. Lee, N. Chopra, S. H. Eom, Y. Zheng, J. G. Xue, F. So, and J. M. Shi, Appl. Phys. Lett. 93(12), 123306 (2008)APPLAB000093000012123306000001.
  31. P. Strohriegl and J. V. Grazulevicius, Adv. Mater. 14(20), 1439 (2002). [ISI]
  32. M. Hiramoto, K. Koyama, K. Nakayama, and M. Yokoyama, Appl. Phys. Lett. 76(10), 1336 (2000)APPLAB000076000010001336000001. [ISI]
  33. I. D. Parker, J. Appl. Phys. 75(3), 1656 (1994)JAPIAU000075000003001656000001.
  34. L. Zhou, X. Li, X. Li, J. Feng, S. Song, and H. Zhang, J. Phys. Chem. C 114(49), 21723 (2010).
  35. L. Zhou, J. Tang, Z. Guo, J. Feng, X. Li, X. Li, R. Deng, and H. Zhang, J. Lumin. 130(11), 2265 (2010).
  36. W. S. Jeon, T. J. Park, S. Y. Kim, R. Pode, J. Jang, and J. H. Kwon, Appl. Phys. Lett. 93(6), 063303 (2008)APPLAB000093000006063303000001.
  37. J. Kalinowski, W. Stampor, J. Mezyk, M. Cocchi, D. Virgili, V. Fattori, and P. Di Marco, Phys. Rev. B 66(23), 235321 (2002).


Figures (click on thumbnails to view enlargements)

FIG.1
The molecular structures of complexes Ir(tfmppy)2(tpip), Ir(dfppy)2(tpip) and the energy level diagram of HOMO and LUMO levels (relative to vacuum level) for materials investigated in this work.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
The experimental setup for transient EL measurements and transient EL signals for the device A (b), B (c), and C (d) as a function of electrical field.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Electric field dependence of charge electron mobility in the thin films.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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