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December 2011

Volume 4, Issue 12

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Demonstration of interfacial charge transfer in an organic charge injection device

C. P. Watson and D. M. Taylor

Appl. Phys. Lett. 99, 223304 (2011); http://dx.doi.org/10.1063/1.3665190 (3 pages)

Online Publication Date: 1 December 2011

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We report the fabrication and testing of an organic charge injection device composed of two adjacent metal-insulator-semiconductor capacitors in which the active semiconductor is poly(3-hexylthiophene). One capacitor, C1, is biased into partial depletion and illuminated with 550 nm light. By applying higher depletion voltages to the second capacitor, C2, photogenerated electrons are induced to flow along the semiconductor-insulator interface from C1 to C2 where they are detected either by simultaneously measuring the C-V characteristic of C2 or the current flow into it. We estimate that the transfer efficiency is in excess of 40% but is capable of significant improvement.
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84.32.Tt Capacitors
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Improving the efficiency of an organic solar cell by a polymer additive to optimize the charge carriers mobility

Ming-Chung Chen, Der-Jang Liaw, Wen-Hsiang Chen, Ying-Chi Huang, Jadab Sharma, and Yian Tai

Appl. Phys. Lett. 99, 223305 (2011); http://dx.doi.org/10.1063/1.3664127 (3 pages)

Online Publication Date: 1 December 2011

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We investigate the effect of a high hole mobility triarylamine-based conjugated polymer on a bulk hetero-junction organic solar cell. We employed a polymer blend consisting of poly(3-hexylthiophene) (P3HT), [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), and poly(N-(4 -(9,9-dioctyl-fluoren-2-yl)phenyl)-N,N′,N′-triphenyl-l,4-phenylenediamine) (PFLAM) as active materials. The hole mobility of PFLAM is ∼10−3 cm2 V−1 s−1, which is similar to the electron mobility of PCBM. Addition of PFLAM improves the hole mobility of the photovoltaic cell augmenting the charge balance of the system. The overall efficiency gain for such a device is 34%.
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88.40.hj Efficiency and performance of solar cells
88.40.jr Organic photovoltaics
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Extraction of the contact resistance from the saturation region of rubrene single-crystal transistors

Masaki Imakawa, Kosuke Sawabe, Yohei Yomogida, Yoshihiro Iwasa, and Taishi Takenobu

Appl. Phys. Lett. 99, 233301 (2011); http://dx.doi.org/10.1063/1.3666236 (3 pages)

Online Publication Date: 5 December 2011

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A modified transmission-line method (TLM) is proposed to extract the contact resistance from the transistor saturation region. The conventional TLM requires a linear current–voltage characteristic, and this requirement strongly limits its application. In this study, we focused on the pinch-off point of the output characteristics and analyzed the contact resistance using nonlinear output curves. We applied the modified TLM to both p- and n-type rubrene single-crystal transistors and compared the mobility differences in terms of both the intrinsic bandwidth and the extrinsic carrier trap density.
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85.30.Tv Field effect devices
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Mechanically tunable microlasers based on highly viscous chiral liquid crystals

Petr V. Shibaev, Benjamin Crooker, Michael Manevich, and Eckhard Hanelt

Appl. Phys. Lett. 99, 233302 (2011); http://dx.doi.org/10.1063/1.3665943 (3 pages)

Online Publication Date: 5 December 2011

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Chiral composition is designed for highly viscous lasing microemitters. The composition forms cholesteric liquid crystal and after doping with pyrromethene 597 was used as an active lasing media in stretchable aluminized silicone cavities. Optical pumping of the system led to lasing at the wavelengths defined by a degree of cavity deformation. Lasing thresholds were lower in aluminized cavity than in transparent cavity. A simple model allowing to predict the shift of lasing wavelength as a function of deformation is developed.
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42.55.Mv Dye lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.79.Kr Display devices, liquid-crystal devices
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High-performance nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polymethylmethacrylate

Toan Thanh Dao, Thu Viet Tran, Koichi Higashimine, Hiromasa Okada, Derrick Mott, Shinya Maenosono, and Hideyuki Murata

Appl. Phys. Lett. 99, 233303 (2011); http://dx.doi.org/10.1063/1.3665937 (3 pages)

Online Publication Date: 6 December 2011

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A mixture of ZnO nanoparticles and polymethylmethacrylate was used as an active layer in a nonvolatile resistive memory device. Current-voltage characteristics of the device showed nonvolatile write-once-read-many-times memory behavior with a switching time on the order of μs. The device exhibited an on/off ratio of 104, retention time of >105 s, and number of readout of >4 × 104 times under a read voltage of 0.5 V. The emission, cross-sectional high-resolution transmission electron microscopy (TEM), scanning TEM-high angle annular dark field imaging, and energy dispersive x-ray spectroscopy elemental mapping measurements suggest that the electrical switching originates from the formation of conduction paths.
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85.30.-z Semiconductor devices
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Highly clear conductive polymer electrode films hybridized with gold nanoparticles

Jin-Yeol Kim, Che-Ryong Hwang, Sang-Hyun Jo, and Woo-Gwang Jung

Appl. Phys. Lett. 99, 233304 (2011); http://dx.doi.org/10.1063/1.3665612 (3 pages)

Online Publication Date: 7 December 2011

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Improved conductive poly(3,4-ethylenedioxy thiophene) (PEDOT) electrode films were made through hybridization with charged gold nanoparticles. The conductivity of these hybrid films increased more than seven times than the value for the PEDOT alone. The optimized films show a sheet resistance value down to 85 ohm⋅sq−1 at 85% transparency when PEDOT was hybridized with gold particles of 12 nm diameter, and the organic light-emitting diode devices deposited on these electrodes show a performance equivalent to that of devices based on a conventional indium tin oxide electrode.
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73.40.Ns Metal-nonmetal contacts
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.07.Pr Organic-inorganic hybrid nanostructures
82.45.Fk Electrodes
85.60.Jb Light-emitting devices
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p-type doping effect on the performance of organic-inorganic hybrid solar cells

Xiaofei Lei, Fute Zhang, Tao Song, and Baoquan Sun

Appl. Phys. Lett. 99, 233305 (2011); http://dx.doi.org/10.1063/1.3669393 (3 pages)

Online Publication Date: 8 December 2011

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The doping effects in poly(3-hexylthiophene) (P3HT) on the hybrid n-Si/P3HT solar cells were investigated. Oxygen and tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) doping in P3HT could dramatically improve the device performance. The improvements were related to the Fermi level shift in P3HT towards its highest occupied molecular orbital, leading to a larger built-in voltage generated at the n-Si/P3HT interface for favorable charge transfer. This Fermi level shift was ascribed to the electron transfer from P3HT to the dopant, which was characterized by the absorption spectra and the photoluminescence lifetime. Solution-based F4-TCNQ displayed as a potential candidate to p-doped conjugated polymer to improve charge transfer/transport properties for the hybrid solar cells.
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88.40.jj Silicon solar cells
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Transient capacitance of light-emitting electrochemical cells

Y. A. Davis, P. P. Crooker, N. M. Haegel, Y. Yoshioka, and J. D. MacKenzie

Appl. Phys. Lett. 99, 233306 (2011); http://dx.doi.org/10.1063/1.3669411 (3 pages)

Online Publication Date: 8 December 2011

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We present time-dependent measurements of the capacitance, current, and optical emission of light-emitting electrochemical cells as a constant voltage bias is applied and removed. We find that the capacitance increases more rapidly than the light or current and can be oscillatory in time. The transient behavior suggests that the capacitance is determined by a combination of ion distribution, free carrier screening and junction width.
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85.60.Jb Light-emitting devices
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Charge transfer complex states in diketopyrrolopyrrole polymers and fullerene blends: Implications for organic solar cell efficiency

D. Moghe, P. Yu, C. Kanimozhi, S. Patil, and S. Guha

Appl. Phys. Lett. 99, 233307 (2011); http://dx.doi.org/10.1063/1.3670043 (3 pages)

Online Publication Date: 9 December 2011

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The spectral photocurrent characteristics of two donor-acceptor diketopyrrolopyrrole (DPP)-based copolymers (PDPP-BBT and TDPP-BBT) blended with a fullerene derivative [6,6]-phenyl C61-butyric acid methyl ester (PCBM) were studied using Fourier-transform photocurrent spectroscopy (FTPS) and monochromatic photocurrent (PC) method. PDPP-BBT:PCBM shows the onset of the lowest charge transfer complex (CTC) state at 1.42 eV, whereas TDPP-BBT:PCBM shows no evidence of the formation of a midgap CTC state. The FTPS and PC spectra of P3HT:PCBM are also compared. The larger singlet state energy difference of TDPP-BBT and PCBM compared to PDPP-BBT/P3HT and PCBM obliterates the formation of a midgap CTC state resulting in an enhanced photovoltaic efficiency over PDPP-BBT:PCBM.
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88.40.jr Organic photovoltaics
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Qn Polymers; organic compounds
79.60.Fr Polymers; organic compounds
71.70.-d Level splitting and interactions
88.40.hj Efficiency and performance of solar cells
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High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer

Yu-Chiang Chao, Chin-Ho Chung, Hsiao-Wen Zan, Hsin-Fei Meng, and Ming-Che Ku

Appl. Phys. Lett. 99, 233308 (2011); http://dx.doi.org/10.1063/1.3668086 (4 pages)

Online Publication Date: 9 December 2011

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A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO3/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 × 104, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.
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85.30.Tv Field effect devices
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Contact effects in high performance fully printed p-channel organic thin film transistors

A. Valletta, A. Daami, M. Benwadih, R. Coppard, G. Fortunato, M. Rapisarda, F. Torricelli, and L. Mariucci

Appl. Phys. Lett. 99, 233309 (2011); http://dx.doi.org/10.1063/1.3669701 (4 pages)

Online Publication Date: 9 December 2011

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Contact effects have been investigated in fully printed p-channel organic thin film transistors with field effect mobility up to 2 cm2/Vs. Electrical characteristics of the organic thin film transistors, with channel length <200 μm, are seriously influenced by contact effects with an anomalous increase of the contact resistance for increasing source-drain voltage. Assuming that contact effects are negligible in long channel transistors and using gradual channel approximation, we evaluated the current-voltage characteristics of the injection contact, showing that I-V characteristics can be modeled as a reverse biased Schottky diode, including barrier lowering induced by the Schottky effect.
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85.30.Tv Field effect devices
85.30.Kk Junction diodes
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Direct observation of internal potential distributions in a bulk heterojunction solar cell

Jongjin Lee, Jaemin Kong, Heejoo Kim, Sung-Oong Kang, and Kwanghee Lee

Appl. Phys. Lett. 99, 243301 (2011); http://dx.doi.org/10.1063/1.3669533 (4 pages)

Online Publication Date: 12 December 2011

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Cross-sectional potential distributions of a polymer bulk heterojunction (BHJ) solar cell, consisting of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester blends, were directly observed by using Kelvin probe force microscopy. It was found that the bulk electric field of BHJ is nearly field-free compared with that of classical metal-insulator-metal model, whereas the electric field of BHJ device is confined to the cathode interface. The cathode-interfaced rectification junction is studied to originate from the formation of bilayered p-n junction in the BHJ.
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88.40.jr Organic photovoltaics
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Low-operating voltage and stable organic field-effect transistors with poly (methyl methacrylate) gate dielectric solution deposited from a high dipole moment solvent

N. B. Ukah, J. Granstrom, R. R. Sanganna Gari, G. M. King, and S. Guha

Appl. Phys. Lett. 99, 243302 (2011); http://dx.doi.org/10.1063/1.3669696 (3 pages)

Online Publication Date: 12 December 2011

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A low-operating voltage and stable pentacene field-effect transistor (FET) employing thin low-dielectric constant gate layer of poly (methyl methacrylate) (PMMA) dissolved in propylene carbonate (PC) has been realized. This device exhibiting high field-effect mobility, a threshold voltage of −1 V, and a small sub-threshold slope at operating voltages below −3 V is compared with an FET cast from PMMA film dissolved in a low dipole moment solvent. The negligible hysteresis and excellent electrical stability of FETs under gate bias stress with the use of PC are traceable to the low density of trap states in PMMA bulk and at the interfaces.
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85.30.Tv Field effect devices
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Measurement of exciton diffusion lengths in optically thin organic films

Kevin J. Bergemann and Stephen R. Forrest

Appl. Phys. Lett. 99, 243303 (2011); http://dx.doi.org/10.1063/1.3668106 (3 pages)

Online Publication Date: 13 December 2011

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Spectrally resolved photoluminescence quenching (SR-PLQ) is a convenient and accurate method for measuring the exciton diffusion length of organic materials; however, the requirement of optically thick films demanded by this technique poses practical limitations to its implementation. Through simulations of the optical field and exciton dynamics, we extend SR-PLQ to the case of optically thin organic films; i.e., films whose thickness is comparable to or less than that of the optical absorption length across the entire optical absorption spectrum. This allows for the characterization of films whose thickness is comparable to that used in practical organic optoelectronic devices. Using this method, we measure the diffusion lengths of several squaraine donors, the acceptor 3,4,9,10 perylenetetracarboxylic dianhydride, and the relationship between the donor, boron subphthalocyanine thickness and diffusion length.
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78.66.Qn Polymers; organic compounds
71.35.-y Excitons and related phenomena
78.55.Kz Solid organic materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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Enhancement of linear and nonlinear optical properties of deoxyribonucleic acid-silica thin films doped with rhodamine

Bouchta Sahraoui, Mindaugas Pranaitis, Konstantinos Iliopoulos, Maria Mihaly, Alina F. Comanescu, Mirela Moldoveanu, Ileana Rau, and Vaidotas Kažukauskas

Appl. Phys. Lett. 99, 243304 (2011); http://dx.doi.org/10.1063/1.3669406 (3 pages)

Online Publication Date: 13 December 2011

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In this work, we present the linear and nonlinear optical properties of DNA as functional material, incorporated into a silica material matrix with rhodamine organic dye. We observed that even low concentration of DNA affects the aggregate behavior of the dyes in silica films. The samples with DNA showed higher transmittance and fluorescence efficiency. Moreover, the presence of DNA has been found to significantly enhance the nonlinear optical response of the systems. In this way, we prove that silica materials can provide suitable matrices for hybridization with functional molecules and can be utilized as active optical waveguide materials with enhanced nonlinear optical properties.
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42.65.-k Nonlinear optics
87.14.gk DNA
78.55.-m Photoluminescence, properties and materials
42.25.Bs Wave propagation, transmission and absorption
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Low-temperature treatment of semiconducting interlayers for high-efficiency light-emitting diodes based on a green-emitting polyfluorene derivative

G. M. Lazzerini, F. Di Stasio, C. Fléchon, D. J. Caruana, and F. Cacialli

Appl. Phys. Lett. 99, 243305 (2011); http://dx.doi.org/10.1063/1.3668093 (3 pages)

Online Publication Date: 14 December 2011

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We investigate the scope for low-temperature treatment of exciton/electron blocking interlayers in light-emitting diodes based on poly(9,9′-dioctylfiuorene-alt-benzothiadiazole) (F8BT). We focus on poly(9,9′-dioctylfluorene-alt-N-(4-butylphenyl)-diphenylamine) (TFB) interlayers processed at temperatures up to 50 °C, i.e., far below the glass transition temperature of TFB (∼156 °C). Continuous-wave and time-resolved photoluminescence studies confirm the formation of both excitons and exciplex species, as a result of the F8BT/TFB intermixing. Interestingly, however, we can still increase the electroluminescence external quantum efficiency from 0.05% to 0.5% and 1% for progressively thicker TFB films. We propose that a degree of intermixing may become acceptable as a trade-off to achieve low-temperature processability.
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85.60.Jb Light-emitting devices
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Photoinduced write-once read-many-times memory device based on DNA biopolymer nanocomposite

Yu-Chueh Hung, Wei-Ting Hsu, Ting-Yu Lin, and Ljiljana Fruk

Appl. Phys. Lett. 99, 253301 (2011); http://dx.doi.org/10.1063/1.3671153 (3 pages)

Online Publication Date: 19 December 2011

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We demonstrate a photoinduced write-once read-many-times (WORM) organic memory device based on DNA biopolymer nanocomposite. The device consists of a single biopolymer layer sandwiched between electrodes, in which electrical bistability is activated by in situ formation of silver nanoparticles embedded in biopolymer upon light irradiation. The device exhibits a switching effect to high conductivity above a threshold of 2.6 V and a good retention property. This facile technique, taking advantage of DNA’s affinity for metals and solution processing, can optically manipulate the properties of DNA nanocomposite thin films, which holds promise for optical storage and plasmonic applications.
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42.79.Vb Optical storage systems, optical disks
85.35.-p Nanoelectronic devices
42.70.Jk Polymers and organics
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Direct electron beam writing of Bragg gratings in exciton polariton waveguides of organic dye nanofibers

Ken Takazawa, Kazutaka Mitsuishi, and Jun-ichi Inoue

Appl. Phys. Lett. 99, 253302 (2011); http://dx.doi.org/10.1063/1.3671148 (4 pages)

Online Publication Date: 20 December 2011

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We develop a direct electron beam (EB) writing technique to fabricate Bragg gratings in organic dye nanofibers of thiacyanine that propagate exciton polaritons (EPs) along the fibers. The scanning electron beam with elaborately optimized parameters “bleaches” the nanofibers with a 100-nm-scale spatial resolution, leading to variation in the refractive index on that scale. We demonstrate that the fabricated Bragg gratings, with a period number N = 40 and a period length Λ ranging from 150 to 200 nm, reflect propagating exciton polaritons with a reflectance of up to ∼0.7.
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42.81.Bm Fabrication, cladding, and splicing
42.79.Dj Gratings
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Dependence of recombination mechanisms and strength on processing conditions in polymer solar cells

Kanwar S. Nalwa, Hari K. Kodali, Baskar Ganapathysubramanian, and Sumit Chaudhary

Appl. Phys. Lett. 99, 263301 (2011); http://dx.doi.org/10.1063/1.3671999 (4 pages)

Online Publication Date: 27 December 2011

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Charge carrier recombination due to carrier trapping is not often considered in polymer based solar cells, except in those using non-fullerene acceptors or new donor polymers with limited short-range order. However, we show that even for the canonical poly(3-hexylthiophene): phenyl-C61-butyric acid methyl ester (P3HT:PCBM) system, relative strengths of bimolecular and trap-assisted recombination are strongly dependent on processing conditions. For slow-grown active-layers, bimolecular recombination is indeed the major loss mechanism under one sun illumination. However, for fast-grown active-layers, trap-assisted recombination dominates over bimolecular recombination by an order of magnitude, and recombination strength at short-circuit condition is 3-4 times higher, leading to loss of photocurrent and lowering of fill factor.
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88.40.H- Solar cells (photovoltaics)
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Fabrication of sub-10 nm gap arrays over large areas for plasmonic sensors

T. Siegfried, Y. Ekinci, H. H. Solak, O. J. F. Martin, and H. Sigg

Appl. Phys. Lett. 99, 263302 (2011); http://dx.doi.org/10.1063/1.3672045 (3 pages)

Online Publication Date: 27 December 2011

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We report a high-throughput method for the fabrication of metallic nanogap arrays with high-accuracy over large areas. This method, based on shadow evaporation and interference lithography, achieves sub-10 nm gap sizes with a high accuracy of ±1.5 nm. Controlled fabrication is demonstrated over mm2 areas and for periods of 250 nm. Experiments complemented with numerical simulations indicate that the formation of nanogaps is a robust, self-limiting process that can be applied to wafer-scale substrates. Surface-enhanced Raman scattering (SERS) experiments illustrate the potential for plasmonic sensing with an exceptionally low standard-deviation of the SERS signal below 3% and average enhancement factors exceeding 1 × 106.
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81.16.Nd Micro- and nanolithography
02.60.-x Numerical approximation and analysis
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.46.-w Structure of nanoscale materials
78.30.-j Infrared and Raman spectra
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Three-dimensional microlasers based on polymer fibers fabricated by electrospinning

Anshuman J. Das, Clément Lafargue, Mélanie Lebental, Joseph Zyss, and K. S. Narayan

Appl. Phys. Lett. 99, 263303 (2011); http://dx.doi.org/10.1063/1.3672223 (3 pages)

Online Publication Date: 28 December 2011

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We report three-dimensional mirror-less lasing from non-cylindrical dye doped polystyrene fibers drawn using an electrospinning procedure where the fiber cross-sectional shape and dimension could be controlled. Signatures of three dimensional etalon like modes were observed corresponding to the transverse and axial quantization of the wave vector. Low lasing thresholds of the order of 200 nJ were achieved along with moderate Q factors.
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42.55.Mv Dye lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.81.Bm Fabrication, cladding, and splicing
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Single-step solution processing of small-molecule organic semiconductor field-effect transistors at high yield

Liyang Yu, Xiaoran Li, Egon Pavlica, Marsha A. Loth, John E. Anthony, Gvido Bratina, Charlotte Kjellander, Gerwin Gelinck, and Natalie Stingelin

Appl. Phys. Lett. 99, 263304 (2011); http://dx.doi.org/10.1063/1.3673280 (3 pages)

Online Publication Date: 28 December 2011

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Here, we report a simple, alternative route towards high-mobility structures of the small-molecular semiconductor 5,11-bis(triethyl silylethynyl) anthradithiophene that requires one single processing step without the need for any post-deposition processing. The method relies on careful control of the casting temperature of the semiconductor and allows rapid production of transistors with uniform and reproducible device performance over large areas.
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85.30.Tv Field effect devices
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Long-lasting flexible organic solar cells stored and tested entirely in air

B. Omrane, C. K. Landrock, Y. Chuo, D. Hohertz, J. Aristizabal, B. Kaminska, and K. L. Kavanagh

Appl. Phys. Lett. 99, 263305 (2011); http://dx.doi.org/10.1063/1.3672222 (3 pages)

Online Publication Date: 29 December 2011

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We report on improved stability of poly(3-hexylthiopene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester bulk heterojunction solar cells using an indium tin oxide (ITO) anode and an indium metal cathode. Except for the ITO anode the devices are fabricated, stored, and tested entirely in air without encapsulation, exhibiting less than 10% loss in power conversion efficiency after 200 days. X-ray photoelectron spectroscopy shows that this improvement in ambient stability is correlated with the diffusion of indium from the cathode into the active polymer. The In oxidizes presumably resulting in a reduction in P3HT polymer chain degradation.
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88.40.jr Organic photovoltaics
88.40.hj Efficiency and performance of solar cells
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