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December 2008

Volume 1, Issue 12

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Light-emitting polymer space-charge-limited transistor

Chun-Yu Chen, Yu-Chiang Chao, Hsin-Fei Meng, and Sheng-Fu Horng

Appl. Phys. Lett. 93, 223301 (2008); http://dx.doi.org/10.1063/1.3027057 (3 pages)

Online Publication Date: 1 December 2008

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Polymer light-emitting transistor is realized by vertically stacking a top-emitting polymer light-emitting diode on a polymer space-charge-limited transistor. The transistor modulates the current flow of the light-emitting diode by the metal-grid base voltage. The active semiconductor of the transistor is poly(3-hexylthiophene). Yellow poly(para-phenylene vinylene) derivative is used as the yellow emitting material. As the cathode is fixed at −12 V and the grid base voltage varies from 0.9 to −0.9 V the light emission is turned on and off with on luminance up to 1208 cd/m2. The current efficiency of the light-emitting transistor is 10 cd/A.
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85.60.Jb Light-emitting devices
85.30.Tv Field effect devices
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
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Ground-state charge-transfer complex formation in hybrid poly(3-hexyl thiophene):titanium dioxide solar cells

I. Haeldermans, K. Vandewal, W. D. Oosterbaan, A. Gadisa, J. D’Haen, M. K. Van Bael, J. V. Manca, and J. Mullens

Appl. Phys. Lett. 93, 223302 (2008); http://dx.doi.org/10.1063/1.3041633 (3 pages)

Online Publication Date: 1 December 2008

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The existence of a ground-state charge-transfer (CT) complex in a conjugated polymer:metal oxide nanoparticle bulk heterojunction photovoltaic cell is demonstrated by Fourier-transform photocurrent spectroscopy (FTPS). The CT complex between poly(3-hexylthiophene) (P3HT) and titanium dioxide (TiO2) is characterized by a weak additional photocurrent band (onset 1 eV) in the FTPS spectra, situated below the conjugated polymer bandgap of 2 eV. The presence of CT interaction between P3HT and TiO2 in relation to frontier orbital alignment is discussed, as well as the contribution of a sub-bandgap interfacial CT state to the electron transfer process in P3HT:TiO2 solar cells.
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84.60.Jt Photoelectric conversion
73.61.Ph Polymers; organic compounds
72.40.+w Photoconduction and photovoltaic effects
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Step-bunched Bi-terminated Si(111) surfaces as a nanoscale orientation template for quasisingle crystalline epitaxial growth of thin film phase pentacene

Toshihiro Shimada, Manabu Ohtomo, Tadamasa Suzuki, Tetsuya Hasegawa, Keiji Ueno, Susumu Ikeda, Koichiro Saiki, Miho Sasaki, and Katsuhiko Inaba

Appl. Phys. Lett. 93, 223303 (2008); http://dx.doi.org/10.1063/1.3040309 (3 pages)

Online Publication Date: 2 December 2008

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We developed a nanoscale orientation template for quasisingle crystalline epitaxial growth of thin film phase pentacene. By using α-math×math Bi termination of surface dangling bonds on step-bunched vicinal surface of Si(111), thin film phase epitaxial pentacene was grown with the crystal axes aligned to the surface steps. Alignment occurred when the step height was higher than the molecular height. The mechanism of the alignment was examined by calculating the energy of the crystal edge.
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68.55.ag Semiconductors
68.35.bg Semiconductors
85.30.Tv Field effect devices
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Transparent and conductive electrodes based on unpatterned, thin metal films

Brendan O’Connor, Chelsea Haughn, Kwang-Hyup An, Kevin P. Pipe, and Max Shtein

Appl. Phys. Lett. 93, 223304 (2008); http://dx.doi.org/10.1063/1.3028046 (3 pages)

Online Publication Date: 4 December 2008

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Transparent electrodes composed of ultrathin, unpatterned metal films are investigated in planar heterojunction (PHJ) and bulk heterojunction organic photovoltaic (OPV) cells. Optimal electrode composition and thickness are deduced from electrical and optical models and experiments, enabling a PHJ-OPV cell to be realized using a silver anode, achieving power conversion efficiency parity with an analogous cell that uses an indium tin oxide anode. Beneficial aspects of smooth, unpatterned metal films as transparent electrodes in OPV cells are also discussed in the text.
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84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.-q Optoelectronic devices
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Field-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystals

Zong-Xiang Xu, Hai-Feng Xiang, V. A. L. Roy, Stephen Sin-Yin Chui, Chi-Ming Che, and P. T. Lai

Appl. Phys. Lett. 93, 223305 (2008); http://dx.doi.org/10.1063/1.3040319 (3 pages)

Online Publication Date: 4 December 2008

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We fabricated a field-effect transistor using micrometer-sized crystals (10–40 μm) of nickel(II) etioporphyrin-I NiOX as active material. Microwires and micrometer-sized crystals of NiOX were obtained by heating NiOX thin film under high vacuum. Through this method, traps due to solvent molecules could be avoided. The transistor fabricated with these micrometer-sized crystals has a hole mobility of 0.15±0.03 cm2 V−1 s−1, which is two orders of magnitude higher than that obtained with the thin film structure (1.1×10−3 cm2 V−1 s−1).
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85.30.Tv Field effect devices
73.50.Dn Low-field transport and mobility; piezoresistance
81.40.Gh Other heat and thermomechanical treatments
81.16.Dn Self-assembly
73.61.Ph Polymers; organic compounds
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Erratum: “Very low turn-on voltage and high brightness tris-(8-hydroxyquinoline)aluminum-based organic light-emitting diodes with a MoOx p-doping layer” [Appl. Phys. Lett. 92, 093305 (2008)]

Guohua Xie, Yanlong Meng, Fengmin Wu, Chen Tao, Dandan Zhang, Mingjun Liu, Qin Xue, Wen Chen, and Yi Zhao

Appl. Phys. Lett. 93, 229902 (2008); http://dx.doi.org/10.1063/1.3046542 (1 page)

Online Publication Date: 4 December 2008

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Abstract Unavailable
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99.10.Cd Errata
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Bulk photoconductive gain in pentacene thin films

J. Gao and F. A. Hegmann

Appl. Phys. Lett. 93, 223306 (2008); http://dx.doi.org/10.1063/1.3043431 (3 pages)

Online Publication Date: 5 December 2008

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Bulk photoconductive gain greater than 16 is observed in pentacene thin films deposited onto coplanar interdigitated-electrode photodetector structures. The gain is highest at low light intensity but decreases at higher light intensity due to trap filling effects. The internal photogeneration quantum efficiency is found to be independent of wavelength below the absorption edge with the onset of photocurrent yield occurring at the absorption edge of the film.
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72.40.+w Photoconduction and photovoltaic effects
72.80.Le Polymers; organic compounds (including organic semiconductors)
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Determining the optimum pentacene channel thickness on hydrophobic and hydrophilic dielectric surface

Sung-jin Mun, Jeong-M. Choi, Kwang H. Lee, Kimoon Lee, and Seongil Im

Appl. Phys. Lett. 93, 233301 (2008); http://dx.doi.org/10.1063/1.3041634 (3 pages)

Online Publication Date: 8 December 2008

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We report that the optimum pentacene channel thickness is dependent on the surface energy state of its dielectric substrate. Pentacene thin-film transistor (TFT) with hydrophobic substrate displays a peak linear mobility at an optimum channel thickness of 50 nm, below or above which the linear mobility decreases. In contrast, the linear mobility of the TFT with hydrophilic substrate monotonically increases until the channel thickness decreases to 15 nm. According to atomic force microscopy of 15-nm-thin pentacene grown on the SiO2 and poly-4-vinyphenol (PVP) dielectrics, the pentacene islands on PVP are not perfectly interconnected unlike the case on SiO2.
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73.61.Ph Polymers; organic compounds
72.80.Le Polymers; organic compounds (including organic semiconductors)
85.30.Tv Field effect devices
68.55.J- Morphology of films
77.55.-g Dielectric thin films
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A flexible organic pentacene nonvolatile memory based on high-κ dielectric layers

Ming-Feng Chang, Po-Tsung Lee, S. P. McAlister, and Albert Chin

Appl. Phys. Lett. 93, 233302 (2008); http://dx.doi.org/10.1063/1.3046115 (3 pages)

Online Publication Date: 10 December 2008

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We report a pentacene thin film transistor nonvolatile memory fabricated on a flexible polyimide substrate. This device shows a low program/erase voltage of 12 V, a speed of 1/100 ms, an initial memory window of 2.4 V, and a 0.78 V memory window after 48 h. This has been achieved by using a high-κ dielectric as charge trapping, blocking, and tunneling gate insulator layers.
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84.30.Sk Pulse and digital circuits
85.30.Tv Field effect devices
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Multilayered solid-state organic laser for simultaneous multiwavelength oscillations

K. Yamashita, A. Arimatsu, N. Takeuchi, M. Takayama, K. Oe, and H. Yanagi

Appl. Phys. Lett. 93, 233303 (2008); http://dx.doi.org/10.1063/1.3046720 (3 pages)

Online Publication Date: 10 December 2008

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This paper describes an organic dye-doped polymeric laser with a multilayered structure of active waveguides. Using the technique of photonanoimprint lithography, organic active-waveguide layers with distributed-feedback cavities and a polymeric intermediate cladding layer were stacked on a silica substrate. Under optical pumping, lasing oscillations at 427 and 636 nm, which correspond to the Bragg reflection wavelengths in the respective active waveguides, were simultaneously observed. The fabrication scheme presented here is expected to be a promising technology for the development of compact multicolor laser sources.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.79.Wc Optical coatings
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High performance ambient processed inverted polymer solar cells through interfacial modification with a fullerene self-assembled monolayer

Steven K. Hau, Hin-Lap Yip, Hong Ma, and Alex K.-Y. Jen

Appl. Phys. Lett. 93, 233304 (2008); http://dx.doi.org/10.1063/1.3028094 (3 pages)

Online Publication Date: 11 December 2008

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The performance of inverted bulk-heterojunction solar cells with zinc oxide nanoparticles as the electron selective contact is compared to those modified with a fullerene self-assembled monolayer (C60-SAM). The devices modified with a C60-SAM show very significant improvement in conversion efficiencies compared to unmodified devices leading to efficiencies as high as 4.9%. This is due to enhanced electronic coupling of the inorganic/organic interface from the C60-SAM leading to improved fill factor and photocurrent. Furthermore, devices fabricated in an inert environment were compared to those fabricated in ambient showing comparable device performance.
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84.60.Jt Photoelectric conversion
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
72.40.+w Photoconduction and photovoltaic effects
81.16.Dn Self-assembly
79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.05.Dz II-VI semiconductors
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Organic heterostructure device with nonvolatile memory behavior using electrically doped layers

Frank Lindner, Karsten Walzer, and Karl Leo

Appl. Phys. Lett. 93, 233305 (2008); http://dx.doi.org/10.1063/1.3046723 (3 pages)

Online Publication Date: 12 December 2008

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Recently, several memory devices based on organic semiconductors were reported. In most cases, single organic layers were employed, and the switching mechanisms were not fully understood. Here, we report on a novel device structure based on electrically doped organic heterostructures showing highly stable memory behavior. The organic layers are embedded between a bottom indium tin oxide and a top metal contact and form a quantum well-like structure. The device shows a hysteresis in the current-voltage characteristics and well-defined switching behavior. We achieved reproducible bistable electrical switching and stable memory phenomena in these organic multilayer heterostructure devices. The two states were retained for up to several days without noticeable decrease of their on/off ratio. Further, it was found that the ratio of the on/off current depends on the writing voltage, allowing the use as multistate memory.
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84.30.Sk Pulse and digital circuits
85.30.De Semiconductor-device characterization, design, and modeling
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Reduced hole mobility due to the presence of excited states in poly-(3-hexylthiophene)

J. Y. Song, N. Stingelin, W. P. Gillin, and T. Kreouzis

Appl. Phys. Lett. 93, 233306 (2008); http://dx.doi.org/10.1063/1.3049129 (3 pages)

Online Publication Date: 12 December 2008

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The hole mobility in poly-(3-hexylthiophene) samples is measured by the dark injection transient technique in both hole only and ambipolar devices. By applying a small offset bias prior to the voltage step, electronic excited states are generated in the ambipolar but not in the hole only devices. The presence of excited states reduces the room temperature hole mobility (typically 5×10−5 cm2 V−1 s−1) by as much as 15% compared to that measured without offset, in contrast to the hole only devices where no significant mobility reduction is seen at the same, or indeed higher, current densities. We attribute the lower mobility to interactions between the charge carriers and the long lived triplet states and to an effective reduction in the number of transport sites available.
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73.50.Dn Low-field transport and mobility; piezoresistance
72.20.Ee Mobility edges; hopping transport
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All ink-jet-printed carbon nanotube thin-film transistor on a polyimide substrate with an ultrahigh operating frequency of over 5 GHz

Jarrod Vaillancourt, Haiyan Zhang, Puminun Vasinajindakaw, Haitao Xia, Xuejun Lu, Xuliang Han, Daniel C. Janzen, Wu-Sheng Shih, Carissa S. Jones, Mike Stroder, Maggie Yihong Chen, Harish Subbaraman, Ray T. Chen, Urs Berger, and Mike Renn

Appl. Phys. Lett. 93, 243301 (2008); http://dx.doi.org/10.1063/1.3043682 (3 pages)

Online Publication Date: 15 December 2008

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We report a flexible carbon nanotube (CNT) thin-film transistor (TFT) fabricated solely by ink-jet printing technology. The TFT is top gate configured, consisting of source and drain electrodes, a carrier transport layer based on an ultrapure, high-density (>1000 CNTs/μm2) CNT thin film, an ion-gel gate dielectric layer, and a poly(3,4-ethylenedioxythiophene) top gate electrode. All the TFT elements are ink-jet printed at room temperature on a polyimide substrate without involving any photolithography patterning or surface pretreatment steps. This CNT-TFT exhibits a high operating frequency of over 5 GHz and an on-off ratio of over 100. Such an all-ink-jet-printed process eliminates the need for lithography, vacuum processing, and metallization procedures and thus provides a promising technology for low-cost, high-throughput fabrication of large-area high-speed flexible electronic circuits on virtually any desired flexible substrate.
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85.35.Kt Nanotube devices
85.30.Tv Field effect devices
85.40.Hp Lithography, masks and pattern transfer
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Lithium salt doped conjugated polymers as electron transporting materials for highly efficient blue polymer light-emitting diodes

Fei Huang, Ping-I Shih, Michelle S. Liu, Ching-Fong Shu, and Alex K.-Y. Jen

Appl. Phys. Lett. 93, 243302 (2008); http://dx.doi.org/10.1063/1.3050452 (3 pages)

Online Publication Date: 16 December 2008

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Highly efficient blue polymer light-emitting diodes (PLEDs) are fabricated using a conjugated polymer, poly[9,9-bis(2-(2-(2-diethanol-amino-ethoxy) ethoxy) ethyl) fluorene-alt-4, 4′-phenylether] as an electron transporting layer (ETL). It was found that the performance of these blue-emitting devices could be greatly improved if the ETL was doped with LiF or Li2CO3 salts. A bis[(4,6-di-fluorophenyl)-pyridinato-N, C2] (picolinate) Ir(III) (FIrpic) complex based blue phosphorescent PLED exhibited a maximum luminance efficiency of 20.3 cd/A with a luminance of 1600 cd/m2 at the current density of 7.9 mA/cm2 and drive voltage of 8.0 V.
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85.60.Jb Light-emitting devices
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Gold work function reduction by 2.2 eV with an air-stable molecular donor layer

B. Bröker, R.-P. Blum, J. Frisch, A. Vollmer, O. T. Hofmann, R. Rieger, K. Müllen, J. P. Rabe, E. Zojer, and N. Koch

Appl. Phys. Lett. 93, 243303 (2008); http://dx.doi.org/10.1063/1.3049616 (3 pages)

Online Publication Date: 17 December 2008

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Ultraviolet photoelectron spectroscopy was used to investigate neutral methyl viologen (1,1′-dimethyl-1H,1′H-[4,4′]bipyridinylidene, MV0) deposited on Au(111). As a result of molecule-to-metal electron transfer, the work function of Au(111) was decreased from 5.50 to 3.30 eV. The energy levels of electron transport layers deposited on top of modified Au surfaces were shifted to higher binding energies compared to layers on pristine Au, and the electron injection barrier was reduced by 0.80 eV for tris(8-hydroxyquinoline)aluminum (Alq3) and by 0.65 eV for C60. The air-stable donor MV0 can thus be used to facilitate electron injection into organic semiconductors even from high work function metals.
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73.30.+y Surface double layers, Schottky barriers, and work functions
72.20.-i Conductivity phenomena in semiconductors and insulators
79.60.Bm Clean metal, semiconductor, and insulator surfaces
79.60.Fr Polymers; organic compounds
72.80.Le Polymers; organic compounds (including organic semiconductors)
78.40.Fy Semiconductors
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Ultrafast laser direct-write actuable microstructures

H, Charles Tapalian, Jason Langseth, Ying Chen, James W. Anderegg, and Joseph Shinar

Appl. Phys. Lett. 93, 243304 (2008); http://dx.doi.org/10.1063/1.2972116 (3 pages)

Online Publication Date: 19 December 2008

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Actuable microelectromechanical systems (MEMS), fabricated by direct “writing” of deformable membranes on indium tin oxide/copper phthalocyanine (CuPc)/Al microstructures using 130 fs laser pulses, are described. The pulses locally ablate the CuPc without requiring micromachined release holes, demonstrating a novel material release mechanism. The direct-write procedure therefore requires fewer processing steps than traditional MEMS approaches. Using it, we fabricated optical modulators with phase modulation depths >π, intensity modulation amplitudes >50%, and bandwidths >100 kHz, at 5–10 V drive voltage. Fabrication of numerous microstructures and nanostructures can be envisioned, including photonic crystals and optical phased-array gratings.
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42.62.-b Laser applications
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
42.79.Hp Optical processors, correlators, and modulators
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High-performance organic integrated circuits based on solution processable polymer-small molecule blends

Jeremy Smith, Richard Hamilton, Martin Heeney, Dago M. de Leeuw, Eugenio Cantatore, John E. Anthony, Iain McCulloch, Donal D. C. Bradley, and Thomas D. Anthopoulos

Appl. Phys. Lett. 93, 253301 (2008); http://dx.doi.org/10.1063/1.3050525 (3 pages)

Online Publication Date: 23 December 2008

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The prospect of realizing high-performance organic circuits via large-area fabrication is attractive for many applications of organic microelectronics. Here we report solution processed organic field-effect transistors and circuits based on polymer-small molecule blends comprising of polytriarylamine and 5,11-bis(triethylsilylethynyl) anthradithiophene. By optimizing blend composition and deposition conditions we are able to demonstrate short channel, bottom-gate, bottom-contact transistors with high mobility and excellent reproducibility. Using these transistors we have built unipolar voltage inverters and ring oscillators with a single stage delay of 712 ns. These are among the fastest organic circuits reported to date and could satisfy the performance requirements of low-end electronic applications.
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85.30.Tv Field effect devices
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
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Correspondence of the sign change in organic magnetoresistance with the onset of bipolar charge transport

F. L. Bloom, W. Wagemans, M. Kemerink, and B. Koopmans

Appl. Phys. Lett. 93, 263302 (2008); http://dx.doi.org/10.1063/1.3059555 (3 pages)

Online Publication Date: 29 December 2008

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In this work we examine the transition between positive and negative organic magnetoresistance in poly[2-methoxy-5-(3′, 7′-dimethyloctyloxy)-p-phenylenevinylene] in order to understand how different regimes of charge transport affect the organic magnetoresistance effect. To characterize the charge transport in these devices we measured the current, low frequency differential capacitance, and electroluminescence efficiency as a function of voltage. These measurements show that the sign change of the magnetoresistance corresponds with a change from a unipolar diffusive transport below the built in voltage (Vbi) to a regime of bipolar drift transport above Vbi.
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72.20.My Galvanomagnetic and other magnetotransport effects
78.60.Fi Electroluminescence
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Effect of substituted side chain on donor-acceptor conjugated copolymers

Shinuk Cho, Jung Hwa Seo, Sun Hee Kim, Suhee Song, Youngeup Jin, Kwanghee Lee, Hongsuk Suh, and Alan J. Heeger

Appl. Phys. Lett. 93, 263301 (2008); http://dx.doi.org/10.1063/1.3059554 (3 pages)

Online Publication Date: 29 December 2008

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The effects of substitute side chain (alkyl or alkoxy) on optical and electrical properties of low-band-gap conjugated copolymers were investigated using poly(2,7-dihydroindeno[2,1-a]indene-co-4,7-di-2-thienyl-2,1,3-benzothiadiazole), poly(2,7-dihydroindeno[2,1-a]indene-co-4,7-bis(4-hexyl-2-thienyl)-2,1,3-benzothiadiazole) (PININE-DHTBT), and poly(2,7-dihydroindeno[2,1-a]indene-co-4,7-bis[3-(hexyloxy)-2-thienyl]-2,1,3-benzothiadiazole) (PININE-DHOTBT). Alkyl introduced PININE-DHTBT exhibits blueshifted absorption spectrum, while alkoxy introduced PININE-DHOTBT exhibits redshifted absorption spectrum. Because of steric hindrance of alkyl or alkoxy side chain, highest occupied molecular orbitals of PININE-DHTBT and PININE-DHOTBT highly localized on donor segments, thereby decreasing hole mobilities of PININE-DHTBT and PININE-DHOTBT. Consequently, despite the spectral advantage of PININE-DHOTBT for photovoltaic cells, the actual solar cell property of PININE-DHOTBT was not enhanced.
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71.20.Rv Polymers and organic compounds
72.20.Ee Mobility edges; hopping transport
78.40.Me Organic compounds and polymers
78.30.Jw Organic compounds, polymers
72.80.Le Polymers; organic compounds (including organic semiconductors)
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Response to “Comment on ‘Surface plasmon coupled electroluminescent emission’” [Appl. Phys. Lett. 93, 266101 (2008)]

D. M. Koller, A. Hohenau, H. Ditlbacher, N. Galler, F. R. Aussenegg, A. Leitner, J. R. Krenn, S. Eder, S. Sax, and E. J. W. List

Appl. Phys. Lett. 93, 266102 (2008); http://dx.doi.org/10.1063/1.3056111 (2 pages)

Online Publication Date: 29 December 2008

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Abstract Unavailable
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85.60.Jb Light-emitting devices
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
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Comment on “Surface plasmon coupled electroluminescent emission” [Appl. Phys. Lett. 92, 103304 (2008)]

Zhaoxin Wu, Shixiong Liang, Bo Jiao, Xuanke Zhao, and Xun Hou

Appl. Phys. Lett. 93, 266101 (2008); http://dx.doi.org/10.1063/1.3056110 (2 pages)

Online Publication Date: 29 December 2008

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Abstract Unavailable
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85.60.Jb Light-emitting devices
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.60.Fi Electroluminescence
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Photoinduced reduction and pattern preservation of giant surface potential on tris(8-hydroxyquinolinato) aluminum(III) thin films

Kazunari Ozasa, Shigeyuki Nemoto, Takashi Isoshima, Eisuke Ito, Mizuo Maeda, and Masahiko Hara

Appl. Phys. Lett. 93, 263304 (2008); http://dx.doi.org/10.1063/1.3058439 (3 pages)

Online Publication Date: 30 December 2008

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The characteristics and mechanisms of photoinduced reduction in giant surface potential (gSP) on tris(8-hydroxyquinolinato) aluminum(III) (Alq3) thin films were investigated and discussed from the results of the reduction dependences on exposure time/intensity and the preservation of photopatterned gSP. The reduction dependences are explained well with numerical-model calculation of surface potential reduction due to the drift of photoexcited carriers assuming the Poole–Frenkel formula for electron mobility. The preservation of patterned gSPs suggests the existence of deep traps involved in the carrier-drift mechanism.
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73.61.Ph Polymers; organic compounds
73.50.Fq High-field and nonlinear effects
73.50.Pz Photoconduction and photovoltaic effects
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
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Influence of the contact metal on the performance of n-type carbonyl-functionalized quaterthiophene organic thin-film transistors

S. Schols, L. Van Willigenburg, R. Müller, D. Bode, M. Debucquoy, S. De Jonge, J. Genoe, P. Heremans, S. Lu, and A. Facchetti

Appl. Phys. Lett. 93, 263303 (2008); http://dx.doi.org/10.1063/1.3059556 (3 pages)

Online Publication Date: 30 December 2008

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Organic thin-film transistors using 5, 5‴-diperfluorohexylcarbonyl-2,2′:5′,2″:5″,2‴-quaterthiophene (DFHCO-4T) as the electron conducting organic semiconductor are fabricated and the performance of these transistors with different top-contact metals is investigated. Transistors with Au source-drain top contacts attain an apparent saturation mobility of 4.6 cm2/V s, whereas this parameter is 100 times lower for similar transistors with Al/LiF top contacts. We explain this lower performance by the formation of a thin interfacial layer with poor charge injection properties resulting from a redox reaction between Al and DFHCO-4T.
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85.30.Tv Field effect devices
73.50.Dn Low-field transport and mobility; piezoresistance
73.40.Ns Metal-nonmetal contacts
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions
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